INGAN/GAN based semipolar green converters
Identifieur interne : 000B66 ( Main/Repository ); précédent : 000B65; suivant : 000B67INGAN/GAN based semipolar green converters
Auteurs : RBID : Pascal:13-0201224Descripteurs français
- Pascal (Inist)
- Semiconducteur III-V, Composé III-V, Lumière verte, Emission optique, Luminescence, Propriété optique, Diode électroluminescente, Aire sélective, Epitaxie phase vapeur, Méthode MOVPE, Puits quantique multiple, Mécanisme croissance, Puits quantique, Nanomatériau, Nitrure de gallium, Nitrure d'indium, Morphologie, Optimisation, InGaN, GaN, 7820, 8560J, 8115K, 8110A.
English descriptors
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Abstract
In order to achieve highly efficient green light emission, we are investigating the realization of InGaN-based luminescence conversion structures optically pumped by a blue LED. Using selective area metalorganic vapor phase epitaxy, we have grown inverted pyramid structures. On the side facets of these structures, semipolar InGaN/GaN multi-quantum wells can be deposited which may have promising characteristics for high luminescence conversion efficiencies. In order to enhance the green emission intensity, both the absorption of the blue excitation light and the conversion to green light must be optimized. By varying the growth parameters, we could stabilize the formation of {1011} semipolar facets resulting in better quantum well morphology and hence better green light conversion. Moreover, the QW number is optimized to make a balance between thermal load - decreasing the quality of the early grown quantum wells - and the lower quality of the quantum wells grown on top of many others. The thermal load has been identified as a very critical parameter for such structures emitting green light at about 505 nm.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">INGAN/GAN based semipolar green converters</title><author><name sortKey="Wang, J" uniqKey="Wang J">J. Wang</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Institut für Optoelektronik, Universität Ulm, Albert-Einstein-Allee 45</s1><s2>89069 Ulm</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName><orgName type="university">Université d'Ulm</orgName></affiliation></author><author><name sortKey="Zhang, D" uniqKey="Zhang D">D. Zhang</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Institut für Optoelektronik, Universität Ulm, Albert-Einstein-Allee 45</s1><s2>89069 Ulm</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName><orgName type="university">Université d'Ulm</orgName></affiliation></author><author><name sortKey="Leute, R A R" uniqKey="Leute R">R. A. R. Leute</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Institut für Optoelektronik, Universität Ulm, Albert-Einstein-Allee 45</s1><s2>89069 Ulm</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName><orgName type="university">Université d'Ulm</orgName></affiliation></author><author><name sortKey="Meisch, T" uniqKey="Meisch T">T. Meisch</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Institut für Optoelektronik, Universität Ulm, Albert-Einstein-Allee 45</s1><s2>89069 Ulm</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName><orgName type="university">Université d'Ulm</orgName></affiliation></author><author><name sortKey="Heinz, D" uniqKey="Heinz D">D. Heinz</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Institut für Optoelektronik, Universität Ulm, Albert-Einstein-Allee 45</s1><s2>89069 Ulm</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName><orgName type="university">Université d'Ulm</orgName></affiliation></author><author><name sortKey="Tischer, I" uniqKey="Tischer I">I. Tischer</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Institut für Quantenmaterie/Gruppe Halbleiterphysik, Universität Ulm, Albert-Einstein-Allee 45</s1><s2>89069 Ulm</s2><s3>DEU</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName><orgName type="university">Université d'Ulm</orgName></affiliation></author><author><name sortKey="Hocker, M" uniqKey="Hocker M">M. Hocker</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Institut für Quantenmaterie/Gruppe Halbleiterphysik, Universität Ulm, Albert-Einstein-Allee 45</s1><s2>89069 Ulm</s2><s3>DEU</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName><orgName type="university">Université d'Ulm</orgName></affiliation></author><author><name sortKey="Thonke, K" uniqKey="Thonke K">K. Thonke</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Institut für Quantenmaterie/Gruppe Halbleiterphysik, Universität Ulm, Albert-Einstein-Allee 45</s1><s2>89069 Ulm</s2><s3>DEU</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName><orgName type="university">Université d'Ulm</orgName></affiliation></author><author><name sortKey="Scholz, F" uniqKey="Scholz F">F. Scholz</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Institut für Optoelektronik, Universität Ulm, Albert-Einstein-Allee 45</s1><s2>89069 Ulm</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName><orgName type="university">Université d'Ulm</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0201224</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0201224 INIST</idno><idno type="RBID">Pascal:13-0201224</idno><idno type="wicri:Area/Main/Corpus">000C68</idno><idno type="wicri:Area/Main/Repository">000B66</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Gallium nitride</term><term>Green light</term><term>Growth mechanism</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium nitride</term><term>Light emission</term><term>Light emitting diodes</term><term>Luminescence</term><term>MOVPE method</term><term>Morphology</term><term>Multiple quantum well</term><term>Nanostructured materials</term><term>Optical properties</term><term>Optimization</term><term>Quantum wells</term><term>Selective area</term><term>VPE</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Lumière verte</term><term>Emission optique</term><term>Luminescence</term><term>Propriété optique</term><term>Diode électroluminescente</term><term>Aire sélective</term><term>Epitaxie phase vapeur</term><term>Méthode MOVPE</term><term>Puits quantique multiple</term><term>Mécanisme croissance</term><term>Puits quantique</term><term>Nanomatériau</term><term>Nitrure de gallium</term><term>Nitrure d'indium</term><term>Morphologie</term><term>Optimisation</term><term>InGaN</term><term>GaN</term><term>7820</term><term>8560J</term><term>8115K</term><term>8110A</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In order to achieve highly efficient green light emission, we are investigating the realization of InGaN-based luminescence conversion structures optically pumped by a blue LED. Using selective area metalorganic vapor phase epitaxy, we have grown inverted pyramid structures. On the side facets of these structures, semipolar InGaN/GaN multi-quantum wells can be deposited which may have promising characteristics for high luminescence conversion efficiencies. In order to enhance the green emission intensity, both the absorption of the blue excitation light and the conversion to green light must be optimized. By varying the growth parameters, we could stabilize the formation of {1011} semipolar facets resulting in better quantum well morphology and hence better green light conversion. Moreover, the QW number is optimized to make a balance between thermal load - decreasing the quality of the early grown quantum wells - and the lower quality of the quantum wells grown on top of many others. The thermal load has been identified as a very critical parameter for such structures emitting green light at about 505 nm.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>370</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>INGAN/GAN based semipolar green converters</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>16th International Conference on Metalorganic Vapor Phase Epitaxy</s1></fA09><fA11 i1="01" i2="1"><s1>WANG (J.)</s1></fA11><fA11 i1="02" i2="1"><s1>ZHANG (D.)</s1></fA11><fA11 i1="03" i2="1"><s1>LEUTE (R. A. R.)</s1></fA11><fA11 i1="04" i2="1"><s1>MEISCH (T.)</s1></fA11><fA11 i1="05" i2="1"><s1>HEINZ (D.)</s1></fA11><fA11 i1="06" i2="1"><s1>TISCHER (I.)</s1></fA11><fA11 i1="07" i2="1"><s1>HOCKER (M.)</s1></fA11><fA11 i1="08" i2="1"><s1>THONKE (K.)</s1></fA11><fA11 i1="09" i2="1"><s1>SCHOLZ (F.)</s1></fA11><fA12 i1="01" i2="1"><s1>JONG KYU KIM</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>KUECH (Thomas F.)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>CANEAU (Catherine)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>REDWING (Joan M.)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>DADGAR (Armin)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Institut für Optoelektronik, Universität Ulm, Albert-Einstein-Allee 45</s1><s2>89069 Ulm</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="02"><s1>Institut für Quantenmaterie/Gruppe Halbleiterphysik, Universität Ulm, Albert-Einstein-Allee 45</s1><s2>89069 Ulm</s2><s3>DEU</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA20><s1>120-123</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000500688410250</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>8 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0201224</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>In order to achieve highly efficient green light emission, we are investigating the realization of InGaN-based luminescence conversion structures optically pumped by a blue LED. Using selective area metalorganic vapor phase epitaxy, we have grown inverted pyramid structures. On the side facets of these structures, semipolar InGaN/GaN multi-quantum wells can be deposited which may have promising characteristics for high luminescence conversion efficiencies. In order to enhance the green emission intensity, both the absorption of the blue excitation light and the conversion to green light must be optimized. By varying the growth parameters, we could stabilize the formation of {1011} semipolar facets resulting in better quantum well morphology and hence better green light conversion. Moreover, the QW number is optimized to make a balance between thermal load - decreasing the quality of the early grown quantum wells - and the lower quality of the quantum wells grown on top of many others. 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